Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J., and Menéndez, J. Direct versus indirect optical recombination in Ge films grown on Si substrates. Physical Review B 84.20 Web. doi:10.1103/PhysRevB.84.205307.
Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J., & Menéndez, J. Direct versus indirect optical recombination in Ge films grown on Si substrates. Physical Review B, 84 (20). https://doi.org/10.1103/PhysRevB.84.205307
Grzybowski, G., Roucka, R., Mathews, J., Jiang, L., Beeler, R. T., Kouvetakis, J., and Menéndez, J.
"Direct versus indirect optical recombination in Ge films grown on Si substrates". Physical Review B 84 (20). United States: American Physical Society. https://doi.org/10.1103/PhysRevB.84.205307.https://par.nsf.gov/biblio/10002346.
@article{osti_10002346,
place = {United States},
title = {Direct versus indirect optical recombination in Ge films grown on Si substrates},
url = {https://par.nsf.gov/biblio/10002346},
DOI = {10.1103/PhysRevB.84.205307},
abstractNote = {Not Available},
journal = {Physical Review B},
volume = {84},
number = {20},
publisher = {American Physical Society},
author = {Grzybowski, G. and Roucka, R. and Mathews, J. and Jiang, L. and Beeler, R. T. and Kouvetakis, J. and Menéndez, J.},
}
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