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Title: Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
Authors:
; ; ; ;
Publication Date:
NSF-PAR ID:
10003482
Journal Name:
Physical Review B
Volume:
85
Issue:
12
ISSN:
1098-0121
Publisher:
American Physical Society
Sponsoring Org:
National Science Foundation
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