Crepaldi, A., Moreschini, L., Autès, G., Tournier-Colletta, C., Moser, S., Virk, N., Berger, H., Bugnon, Ph., Chang, Y. J., Kern, K., Bostwick, A., Rotenberg, E., Yazyev, O. V., and Grioni, M. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI. Physical Review Letters 109.9 Web. doi:10.1103/PhysRevLett.109.096803.
Crepaldi, A., Moreschini, L., Autès, G., Tournier-Colletta, C., Moser, S., Virk, N., Berger, H., Bugnon, Ph., Chang, Y. J., Kern, K., Bostwick, A., Rotenberg, E., Yazyev, O. V., & Grioni, M. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI. Physical Review Letters, 109 (9). https://doi.org/10.1103/PhysRevLett.109.096803
Crepaldi, A., Moreschini, L., Autès, G., Tournier-Colletta, C., Moser, S., Virk, N., Berger, H., Bugnon, Ph., Chang, Y. J., Kern, K., Bostwick, A., Rotenberg, E., Yazyev, O. V., and Grioni, M.
"Giant Ambipolar Rashba Effect in the Semiconductor BiTeI". Physical Review Letters 109 (9). United States: American Physical Society. https://doi.org/10.1103/PhysRevLett.109.096803.https://par.nsf.gov/biblio/10004788.
@article{osti_10004788,
place = {United States},
title = {Giant Ambipolar Rashba Effect in the Semiconductor BiTeI},
url = {https://par.nsf.gov/biblio/10004788},
DOI = {10.1103/PhysRevLett.109.096803},
abstractNote = {Not Available},
journal = {Physical Review Letters},
volume = {109},
number = {9},
publisher = {American Physical Society},
author = {Crepaldi, A. and Moreschini, L. and Autès, G. and Tournier-Colletta, C. and Moser, S. and Virk, N. and Berger, H. and Bugnon, Ph. and Chang, Y. J. and Kern, K. and Bostwick, A. and Rotenberg, E. and Yazyev, O. V. and Grioni, M.},
}
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