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  • Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
Title: Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
PAR ID:
10005071
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
American Physical Society
Date Published:
Journal Name:
Physical Review B
Volume:
86
Issue:
16
ISSN:
1098-0121
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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