Wen, C.-Y., Tersoff, J., Hillerich, K., Reuter, M. C., Park, J. H., Kodambaka, S., Stach, E. A., and Ross, F. M. Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires. Physical Review Letters 107.2 Web. doi:10.1103/PhysRevLett.107.025503.
Wen, C.-Y., Tersoff, J., Hillerich, K., Reuter, M. C., Park, J. H., Kodambaka, S., Stach, E. A., & Ross, F. M. Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires. Physical Review Letters, 107 (2). https://doi.org/10.1103/PhysRevLett.107.025503
Wen, C.-Y., Tersoff, J., Hillerich, K., Reuter, M. C., Park, J. H., Kodambaka, S., Stach, E. A., and Ross, F. M.
"Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires". Physical Review Letters 107 (2). United States: American Physical Society. https://doi.org/10.1103/PhysRevLett.107.025503.https://par.nsf.gov/biblio/10011148.
@article{osti_10011148,
place = {United States},
title = {Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires},
url = {https://par.nsf.gov/biblio/10011148},
DOI = {10.1103/PhysRevLett.107.025503},
abstractNote = {Not Available},
journal = {Physical Review Letters},
volume = {107},
number = {2},
publisher = {American Physical Society},
author = {Wen, C.-Y. and Tersoff, J. and Hillerich, K. and Reuter, M. C. and Park, J. H. and Kodambaka, S. and Stach, E. A. and Ross, F. M.},
}
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