Chon, M. J., Sethuraman, V. A., McCormick, A., Srinivasan, V., and Guduru, P. R. Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon. Physical Review Letters 107.4 Web. doi:10.1103/PhysRevLett.107.045503.
Chon, M. J., Sethuraman, V. A., McCormick, A., Srinivasan, V., & Guduru, P. R. Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon. Physical Review Letters, 107 (4). https://doi.org/10.1103/PhysRevLett.107.045503
Chon, M. J., Sethuraman, V. A., McCormick, A., Srinivasan, V., and Guduru, P. R.
"Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon". Physical Review Letters 107 (4). United States: American Physical Society. https://doi.org/10.1103/PhysRevLett.107.045503.https://par.nsf.gov/biblio/10011258.
@article{osti_10011258,
place = {United States},
title = {Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon},
url = {https://par.nsf.gov/biblio/10011258},
DOI = {10.1103/PhysRevLett.107.045503},
abstractNote = {Not Available},
journal = {Physical Review Letters},
volume = {107},
number = {4},
publisher = {American Physical Society},
author = {Chon, M. J. and Sethuraman, V. A. and McCormick, A. and Srinivasan, V. and Guduru, P. R.},
}
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