Bennaceur, K., Guillemette, J., Lévesque, P. L., Cottenye, N., Mahvash, F., Hemsworth, N., Kumar, Abhishek, Murata, Y., Heun, S., Goerbig, M. O., Proust, C., Siaj, M., Martel, R., Gervais, G., and Szkopek, T. Measurement of topological Berry phase in highly disordered graphene. Physical Review B 92.12 Web. doi:10.1103/PhysRevB.92.125410.
Bennaceur, K., Guillemette, J., Lévesque, P. L., Cottenye, N., Mahvash, F., Hemsworth, N., Kumar, Abhishek, Murata, Y., Heun, S., Goerbig, M. O., Proust, C., Siaj, M., Martel, R., Gervais, G., and Szkopek, T.
"Measurement of topological Berry phase in highly disordered graphene". Physical Review B 92 (12). United States: American Physical Society. https://doi.org/10.1103/PhysRevB.92.125410.https://par.nsf.gov/biblio/10011909.
@article{osti_10011909,
place = {United States},
title = {Measurement of topological Berry phase in highly disordered graphene},
url = {https://par.nsf.gov/biblio/10011909},
DOI = {10.1103/PhysRevB.92.125410},
abstractNote = {Not Available},
journal = {Physical Review B},
volume = {92},
number = {12},
publisher = {American Physical Society},
author = {Bennaceur, K. and Guillemette, J. and Lévesque, P. L. and Cottenye, N. and Mahvash, F. and Hemsworth, N. and Kumar, Abhishek and Murata, Y. and Heun, S. and Goerbig, M. O. and Proust, C. and Siaj, M. and Martel, R. and Gervais, G. and Szkopek, T.},
}
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