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Title: Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering
NSF-PAR ID:
10014025
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Journal of Physics: Condensed Matter
Volume:
28
Issue:
8
ISSN:
0953-8984
Page Range / eLocation ID:
Article No. 085801
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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