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Title: Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs
NSF-PAR ID:
10014286
Author(s) / Creator(s):
; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
31
Issue:
3
ISSN:
0268-1242
Page Range / eLocation ID:
Article No. 035016
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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