Switching characteristics of W/Zr/HfO 2 /TiN ReRAM devices for multi-level cell non-volatile memory applications
- NSF-PAR ID:
- 10014449
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Semiconductor Science and Technology
- Volume:
- 30
- Issue:
- 7
- ISSN:
- 0268-1242
- Page Range / eLocation ID:
- Article No. 075002
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation