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Title: Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures
NSF-PAR ID:
10014853
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
30
Issue:
5
ISSN:
0268-1242
Page Range / eLocation ID:
Article No. 055015
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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