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Title: In situ low temperature As-doping of Ge films using As(SiH 3 ) 3 and As(GeH 3 ) 3 : fundamental properties and device prototypes
Authors:
; ; ; ; ; ;
Publication Date:
NSF-PAR ID:
10014915
Journal Name:
Semiconductor Science and Technology
Volume:
30
Issue:
10
Page Range or eLocation-ID:
Article No. 105028
ISSN:
0268-1242
Publisher:
IOP Publishing
Sponsoring Org:
National Science Foundation
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