In situ low temperature As-doping of Ge films using As(SiH 3 ) 3 and As(GeH 3 ) 3 : fundamental properties and device prototypes
- NSF-PAR ID:
- 10014915
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Semiconductor Science and Technology
- Volume:
- 30
- Issue:
- 10
- ISSN:
- 0268-1242
- Page Range / eLocation ID:
- Article No. 105028
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation