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Title: In situ low temperature As-doping of Ge films using As(SiH 3 ) 3 and As(GeH 3 ) 3 : fundamental properties and device prototypes
NSF-PAR ID:
10014915
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
30
Issue:
10
ISSN:
0268-1242
Page Range / eLocation ID:
Article No. 105028
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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