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Title: ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications
NSF-PAR ID:
10014949
Author(s) / Creator(s):
; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
30
Issue:
12
ISSN:
0268-1242
Page Range / eLocation ID:
Article No. 125017
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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