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Title: Interfacial spin-orbit torque without bulk spin-orbit coupling
Authors:
; ; ; ; ; ; ; ;
Publication Date:
NSF-PAR ID:
10016402
Journal Name:
Physical Review B
Volume:
93
Issue:
18
ISSN:
2469-9950
Publisher:
American Physical Society
Sponsoring Org:
National Science Foundation
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  1. Switching of magnetization by spin–orbit torque in the (Ga,Mn)(As,P) film was studied with currents along ⟨100⟩ crystal directions and an in-plane magnetic field bias. This geometry allowed us to identify the presence of two independent spin–orbit-induced magnetic fields: the Rashba field and the Dresselhaus field. Specifically, we observe that when the in-plane bias field is along the current (I[Formula: see text]H bias ), switching is dominated by the Rashba field, while the Dresselhaus field dominates magnetization reversal when the bias field is perpendicular to the current (I ⊥ H bias ). In our experiments, the magnitudes of the Rashba and Dresselhaus fields were determined to be 2.0 and 7.5 Oe, respectively, at a current density of 8.0 × 10 5 A/cm 2 .