Long, Pengyu, Wilson, Evan, Huang, Jun Z., Klimeck, Gerhard, Rodwell, Mark J., and Povolotskyi, Michael. Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs. Retrieved from https://par.nsf.gov/biblio/10016981. IEEE Electron Device Letters 37.1 Web. doi:10.1109/LED.2015.2497666.

Long, Pengyu, Wilson, Evan, Huang, Jun Z., Klimeck, Gerhard, Rodwell, Mark J., & Povolotskyi, Michael. Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs. IEEE Electron Device Letters, 37 (1). Retrieved from https://par.nsf.gov/biblio/10016981. https://doi.org/10.1109/LED.2015.2497666

Long, Pengyu, Wilson, Evan, Huang, Jun Z., Klimeck, Gerhard, Rodwell, Mark J., and Povolotskyi, Michael. "Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs". IEEE Electron Device Letters 37 (1). Country unknown/Code not available. https://doi.org/10.1109/LED.2015.2497666. https://par.nsf.gov/biblio/10016981.

@article{osti_10016981,
place = {Country unknown/Code not available}, title = {Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs}, url = {https://par.nsf.gov/biblio/10016981}, DOI = {10.1109/LED.2015.2497666}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {37}, number = {1}, author = {Long, Pengyu and Wilson, Evan and Huang, Jun Z. and Klimeck, Gerhard and Rodwell, Mark J. and Povolotskyi, Michael}, }