Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction
- Award ID(s):
- 1207394
- NSF-PAR ID:
- 10018262
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Volume:
- 34
- Issue:
- 1
- ISSN:
- 0734-2101
- Page Range / eLocation ID:
- 01A139
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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