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Title: Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films
NSF-PAR ID:
10019071
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
31
Issue:
10
ISSN:
0268-1242
Page Range / eLocation ID:
Article No. 105007
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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