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Solid solutions of Mg 2 Si and Mg 2 Sn are promising thermoelectric materials owing to their high thermoelectric figures-of-merit and non-toxicity, but they may undergo phase separation under thermal cycling due to the presence of miscibility gaps, implying that the thermoelectric properties could be significantly degraded during thermoelectric device operation. Herein, this study investigates the strain-induced suppression of the miscibility gap in solid solutions of Mg 2 Si and Mg 2 Sn. Separately prepared Mg 2 Si and Mg 2 Sn powders were made into (Mg 2 Si) 0.7 (Mg 2 Sn) 0.3 mixtures using a high energy ball-milling method followed by spark plasma sintering. Afterwards, the phase evolution of the mixtures, depending on thermal annealing and mixing conditions, was studied experimentally and theoretically. Transmission electron microscopy and X-ray diffraction results show that, despite the presence of a miscibility gap in the pseudo-binary phase diagram, the initial mixture of Mg 2 Si and Mg 2 Sn evolved towards a solid solution state after annealing for 3 hours at 720 °C. Thermodynamic analysis as well as phase-field microstructure simulations show that the strain energy due to the coherent spinodal effect suppresses the chemical spinodal entirely and prevents phase separation. This strategy to suppress the miscibility gap induced by lattice strain through non-equilibrium processing can benefit the thermoelectric figure-of-merit by maximizing phonon alloy scattering. Furthermore, stable solid solutions by engineering phase diagrams have the potential to facilitate the reliable long term operation of thermoelectric generators under continuous thermal loads.more » « less
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Abstract A β‐FeSi2–SiGe nanocomposite is synthesized via a react/transform spark plasma sintering technique, in which eutectoid phase transformation, Ge alloying, selective doping, and sintering are completed in a single process, resulting in a greatly reduced process time and thermal budget. Hierarchical structuring of the SiGe secondary phase to achieve coexistence of a percolated network with isolated nanoscale inclusions effectively decouples the thermal and electrical transport. Combined with selective doping that reduces conduction band offsets, the percolation strategy produces overall electron mobilities 30 times higher than those of similar materials produced using typical powder‐processing routes. As a result, a maximum thermoelectric figure of merit
ZT of ≈0.7 at 700 °C is achieved in the β‐FeSi2–SiGe nanocomposite. -
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Abstract The new compounds Li2Mg2Si2S6and Li2Mg2Ge2S6have been prepared via traditional high‐temperature, solid‐state synthesis. The title compounds crystallize in the polar, noncentrosymmetric, trigonal space group
P 31m (No. 157) and adopt a new structure type featuring staggered, ethane‐like (T2S6)6−units, where T=Si or Ge. These (T2S6)6−units are nestled within the holes of magnesium‐sulfide “layers” that are created through the edge‐sharing of MgS6octahedra. The holes found in the lithium‐sulfide “layers”, created by LiS6edge‐sharing octahedra, remain vacant, containing no (T2S6)6−anionic group. Through the face sharing of the respective MgS6and LiS6octahedra, the magnesium‐sulfide and lithium‐sulfide “layers” are stitched together resulting in an overall three‐dimensional structure. The optical bandgaps of Li2Mg2Si2S6and Li2Mg2Ge2S6are 3.24 and 3.18 eV, respectively, as estimated from optical diffuse reflectance UV‐Vis‐NIR spectroscopy. The compounds exhibit second harmonic generation responses of ∼0.24×KDP and ∼2.92×α‐quartz for Li2Mg2Si2S6and ∼0.17×KDP and ∼2.08×α‐quartz for Li2Mg2Ge2S6, using a Nd:YAG laser at 1.064 μm. Electronic structure calculations were performed using density functional theory and the linearized augmented plane‐wave approach within the WIEN2k software package. Examination of the electronic band structures shows that these compounds are indirect bandgap semiconductors.
