An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage
- NSF-PAR ID:
- 10021829
- Publisher / Repository:
- Institute of Electrical and Electronics Engineers
- Date Published:
- Journal Name:
- IEEE Journal of the Electron Devices Society
- Volume:
- 3
- Issue:
- 1
- ISSN:
- 2168-6734
- Page Range / eLocation ID:
- 54 to 57
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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