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Title: An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage
NSF-PAR ID:
10021829
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
Institute of Electrical and Electronics Engineers
Date Published:
Journal Name:
IEEE Journal of the Electron Devices Society
Volume:
3
Issue:
1
ISSN:
2168-6734
Page Range / eLocation ID:
54 to 57
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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