Gallagher, J. C., Meng, K. Y., Brangham, J. T., Wang, H. L., Esser, B. D., McComb, D. W., and Yang, F. Y. Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films. Physical Review Letters 118.2 Web. doi:10.1103/PhysRevLett.118.027201.
Gallagher, J. C., Meng, K. Y., Brangham, J. T., Wang, H. L., Esser, B. D., McComb, D. W., & Yang, F. Y. Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films. Physical Review Letters, 118 (2). https://doi.org/10.1103/PhysRevLett.118.027201
Gallagher, J. C., Meng, K. Y., Brangham, J. T., Wang, H. L., Esser, B. D., McComb, D. W., and Yang, F. Y.
"Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films". Physical Review Letters 118 (2). United States: American Physical Society. https://doi.org/10.1103/PhysRevLett.118.027201.https://par.nsf.gov/biblio/10022232.
@article{osti_10022232,
place = {United States},
title = {Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films},
url = {https://par.nsf.gov/biblio/10022232},
DOI = {10.1103/PhysRevLett.118.027201},
abstractNote = {Not Available},
journal = {Physical Review Letters},
volume = {118},
number = {2},
publisher = {American Physical Society},
author = {Gallagher, J. C. and Meng, K. Y. and Brangham, J. T. and Wang, H. L. and Esser, B. D. and McComb, D. W. and Yang, F. Y.},
}
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