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1. Controlling Polarity of MoTe ₂ Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

   https://doi.org/10.1021/acsnano.9b05502  

   Liu, Xia; Islam, Arnob; Guo, Jing; Feng, Philip X.-L. (January 2020, ACS Nano)
2. Magnetocapacitance at the Ni/BiInO ₃ Schottky Interface

   https://doi.org/10.1021/acsami.3c13478  

   Viswan, Gauthami; Wang, Kun; Streubel, Robert; Hong, Xia; Valanoor, Nagarajan; Sando, Daniel; Dowben, Peter A. (January 2024, ACS Applied Materials & Interfaces)
3. Schottky diode characteristics on high-growth rate LPCVD β -Ga ₂ O ₃ films on (010) and (001) Ga ₂ O ₃ substrates

   https://doi.org/10.1063/5.0083659  

   Saha, Sudipto; Meng, Lingyu; Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M.; Zhao, Hongping; Singisetti, Uttam (March 2022, Applied Physics Letters)

   High crystalline quality thick β-Ga₂O₃drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga₂O₃thin films grown on Sn-doped (010) and (001) β-Ga₂O₃substrates by LPCVD with a fast growth rate varying from 13 to 21  μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes. 

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4. Flexible β‐Ga ₂ O ₃ Nanomembrane Schottky Barrier Diodes

   https://doi.org/10.1002/aelm.201800714  

   Swinnich, Edward; Hasan, Md_Nazmul; Zeng, Ke; Dove, Yash; Singisetti, Uttam; Mazumder, Baishakhi; Seo, Jung‐Hun (January 2019, Advanced Electronic Materials)

   Abstract Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga₂O₃nanomembranes (NMs). In order to realize flexible high power β‐Ga₂O₃SBDs, sub‐micron thick freestanding β‐Ga₂O₃NMs are created from a bulk β‐Ga₂O₃substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga₂O₃NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga₂O₃SBDs exhibit the record high critical breakdown field strength (E_c) of 1.2 MV cm⁻¹in the flat condition and 1.07 MV cm⁻¹ofE_cunder the bending condition. Overall, flexible β‐Ga₂O₃SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high‐performance flexible applications. 

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5. Thermal Simulations of High Current β-Ga ₂ O ₃ Schottky Rectifiers

   https://doi.org/10.1149/2.0361907jss  

   Sharma, Ribhu; Patrick, Erin; Law, Mark E.; Yang, Jiancheng; Ren, F.; Pearton, S. J. (January 2019, ECS Journal of Solid State Science and Technology)