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  • Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3−𝜹 thin films via voltage controlled solid-state ionic gating
Title: Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3−𝜹 thin films via voltage controlled solid-state ionic gating
NSF-PAR ID:
10033236
Author(s) / Creator(s):
 ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
APL Materials
Volume:
5
Issue:
4
ISSN:
2166-532X
Page Range / eLocation ID:
042504
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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