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Title: Doped Hf 0.5 Zr 0.5 O 2 for high efficiency integrated supercapacitors
NSF-PAR ID:
10033248
Author(s) / Creator(s):
 ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
110
Issue:
23
ISSN:
0003-6951
Page Range / eLocation ID:
232904
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices. 
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