Strained GaN quantum-well FETs on single crystal bulk AlN substrates
- NSF-PAR ID:
- 10033284
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 110
- Issue:
- 6
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 063501
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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