Thermoelectric generators are an environmentally friendly and reliable solid‐state energy conversion technology. Flexible and low‐cost thermoelectric generators are especially suited to power flexible electronics and sensors using body heat or other ambient heat sources. Bismuth telluride (Bi2Te3) based thermoelectric materials exhibit their best performance near room temperature making them an ideal candidate to power wearable electronics and sensors using body heat. In this report, Bi2Te3thin films are deposited on a flexible polyimide substrate using low‐cost and scalable manufacturing methods. The synthesized Bi2Te3nanocrystals have a thickness of 35 ± 15 nm and a lateral dimension of 692 ± 186 nm. Thin films fabricated from these nanocrystals exhibit a peak power factor of 0.35 mW m−1·K−2at 433 K, which is among the highest reported values for flexible thermoelectric films. In order to evaluate the flexibility of the thin films, static and dynamic bending tests are performed while monitoring the change in electrical resistivity. After 1000 bending cycles over a 50 mm radius of curvature, the change in electrical resistance of the film is 23%. Using Bi2Te3solutions, the ability to print thermoelectric thin films with an aerosol jet printer is demonstrated, highlighting the potential of additive manufacturing techniques for fabricating flexible thermoelectric generators.
A solid‐state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low‐cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu2Se) thin film, consisting of earth‐abundant elements, is reported. The thin film is fabricated by a low‐cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu2Se thin film exhibits a power factor of 0.62 mW/(m K2) at 684 K on rigid Al2O3substrate and 0.46 mW/(m K2) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu2Se thin films (<0.1 mW/(m K2)) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K2)). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low‐cost and scalable pathway to high‐performance flexible thin film thermoelectric devices from relatively earth‐abundant elements.
more » « less- NSF-PAR ID:
- 10034982
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 29
- Issue:
- 21
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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