Gao, Fangliang, Wen, Lei, Xu, Zhenzhu, Han, Jinglei, Yu, Yuefeng, Zhang, Shuguang, and Li, Guoqiang. Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms. Small 13.21 Web. doi:10.1002/smll.201603775.

Gao, Fangliang, Wen, Lei, Xu, Zhenzhu, Han, Jinglei, Yu, Yuefeng, Zhang, Shuguang, & Li, Guoqiang. Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms. Small, 13 (21). https://doi.org/10.1002/smll.201603775

Gao, Fangliang, Wen, Lei, Xu, Zhenzhu, Han, Jinglei, Yu, Yuefeng, Zhang, Shuguang, and Li, Guoqiang. "Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms". Small 13 (21). Germany: Wiley Blackwell (John Wiley & Sons). https://doi.org/10.1002/smll.201603775. https://par.nsf.gov/biblio/10035551.

@article{osti_10035551,
place = {Germany}, title = {Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms}, url = {https://par.nsf.gov/biblio/10035551}, DOI = {10.1002/smll.201603775}, abstractNote = {Not Available}, journal = {Small}, volume = {13}, number = {21}, publisher = {Wiley Blackwell (John Wiley & Sons)}, author = {Gao, Fangliang and Wen, Lei and Xu, Zhenzhu and Han, Jinglei and Yu, Yuefeng and Zhang, Shuguang and Li, Guoqiang}, }