Moser, Neil, McCandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Green, Andrew, Neal, Adam, Mou, Shin, Ahmadi, Elaheh, Speck, James, Chabak, Kelson, Peixoto, Nathalia, and Jessen, Gregg. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs. IEEE Electron Device Letters 38.6 Web. doi:10.1109/LED.2017.2697359.

Moser, Neil, McCandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Green, Andrew, Neal, Adam, Mou, Shin, Ahmadi, Elaheh, Speck, James, Chabak, Kelson, Peixoto, Nathalia, & Jessen, Gregg. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs. IEEE Electron Device Letters, 38 (6). https://doi.org/10.1109/LED.2017.2697359

Moser, Neil, McCandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Green, Andrew, Neal, Adam, Mou, Shin, Ahmadi, Elaheh, Speck, James, Chabak, Kelson, Peixoto, Nathalia, and Jessen, Gregg. "Ge-Doped ${\beta }$ -Ga2O3 MOSFETs". IEEE Electron Device Letters 38 (6). United States: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/LED.2017.2697359. https://par.nsf.gov/biblio/10035863.

@article{osti_10035863,
place = {United States}, title = {Ge-Doped ${\beta }$ -Ga2O3 MOSFETs}, url = {https://par.nsf.gov/biblio/10035863}, DOI = {10.1109/LED.2017.2697359}, abstractNote = {Not Available}, journal = {IEEE Electron Device Letters}, volume = {38}, number = {6}, publisher = {Institute of Electrical and Electronics Engineers}, author = {Moser, Neil and McCandless, Jonathan and Crespo, Antonio and Leedy, Kevin and Green, Andrew and Neal, Adam and Mou, Shin and Ahmadi, Elaheh and Speck, James and Chabak, Kelson and Peixoto, Nathalia and Jessen, Gregg}, }