Chowdhury, F. A., Sadaf, S. M., Shi, Q., Chen, Y.-C., Guo, H., and Mi, Z. Optically active dilute-antimonide III-nitride nanostructures for optoelectronic devices. Applied Physics Letters 111.6 Web. doi:10.1063/1.4997450.
Chowdhury, F. A., Sadaf, S. M., Shi, Q., Chen, Y.-C., Guo, H., & Mi, Z. Optically active dilute-antimonide III-nitride nanostructures for optoelectronic devices. Applied Physics Letters, 111 (6). https://doi.org/10.1063/1.4997450
Chowdhury, F. A., Sadaf, S. M., Shi, Q., Chen, Y.-C., Guo, H., and Mi, Z.
"Optically active dilute-antimonide III-nitride nanostructures for optoelectronic devices". Applied Physics Letters 111 (6). United States: American Institute of Physics. https://doi.org/10.1063/1.4997450.https://par.nsf.gov/biblio/10036358.
@article{osti_10036358,
place = {United States},
title = {Optically active dilute-antimonide III-nitride nanostructures for optoelectronic devices},
url = {https://par.nsf.gov/biblio/10036358},
DOI = {10.1063/1.4997450},
abstractNote = {Not Available},
journal = {Applied Physics Letters},
volume = {111},
number = {6},
publisher = {American Institute of Physics},
author = {Chowdhury, F. A. and Sadaf, S. M. and Shi, Q. and Chen, Y.-C. and Guo, H. and Mi, Z.},
}
Warning: Leaving National Science Foundation Website
You are now leaving the National Science Foundation website to go to a non-government website.
Website:
NSF takes no responsibility for and exercises no control over the views expressed or the accuracy of
the information contained on this site. Also be aware that NSF's privacy policy does not apply to this site.