Cai, Hui, Chen, Bin, Wang, Gang, Soignard, Emmanuel, Khosravi, Afsaneh, Manca, Marco, Marie, Xavier, Chang, Shery L. Y., Urbaszek, Bernhard, and Tongay, Sefaattin. Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy. Advanced Materials 29.8 Web. doi:10.1002/adma.201605551.

Cai, Hui, Chen, Bin, Wang, Gang, Soignard, Emmanuel, Khosravi, Afsaneh, Manca, Marco, Marie, Xavier, Chang, Shery L. Y., Urbaszek, Bernhard, & Tongay, Sefaattin. Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy. Advanced Materials, 29 (8). https://doi.org/10.1002/adma.201605551

Cai, Hui, Chen, Bin, Wang, Gang, Soignard, Emmanuel, Khosravi, Afsaneh, Manca, Marco, Marie, Xavier, Chang, Shery L. Y., Urbaszek, Bernhard, and Tongay, Sefaattin. "Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy". Advanced Materials 29 (8). Country unknown/Code not available: Wiley Blackwell (John Wiley & Sons). https://doi.org/10.1002/adma.201605551. https://par.nsf.gov/biblio/10037148.

@article{osti_10037148,
place = {Country unknown/Code not available}, title = {Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy}, url = {https://par.nsf.gov/biblio/10037148}, DOI = {10.1002/adma.201605551}, abstractNote = {Not Available}, journal = {Advanced Materials}, volume = {29}, number = {8}, publisher = {Wiley Blackwell (John Wiley & Sons)}, author = {Cai, Hui and Chen, Bin and Wang, Gang and Soignard, Emmanuel and Khosravi, Afsaneh and Manca, Marco and Marie, Xavier and Chang, Shery L. Y. and Urbaszek, Bernhard and Tongay, Sefaattin}, }