Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Rahman, Rajib, Rodwell, Mark J., and Klimeck, Gerhard. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs. Retrieved from https://par.nsf.gov/biblio/10038709. IEEE Transactions on Electron Devices 64.6 Web. doi:10.1109/TED.2017.2690669.

Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Rahman, Rajib, Rodwell, Mark J., & Klimeck, Gerhard. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs. IEEE Transactions on Electron Devices, 64 (6). Retrieved from https://par.nsf.gov/biblio/10038709. https://doi.org/10.1109/TED.2017.2690669

Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Rahman, Rajib, Rodwell, Mark J., and Klimeck, Gerhard. "A Multiscale Modeling of Triple-Heterojunction Tunneling FETs". IEEE Transactions on Electron Devices 64 (6). Country unknown/Code not available. https://doi.org/10.1109/TED.2017.2690669. https://par.nsf.gov/biblio/10038709.

@article{osti_10038709,
place = {Country unknown/Code not available}, title = {A Multiscale Modeling of Triple-Heterojunction Tunneling FETs}, url = {https://par.nsf.gov/biblio/10038709}, DOI = {10.1109/TED.2017.2690669}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {64}, number = {6}, author = {Huang, Jun Z. and Long, Pengyu and Povolotskyi, Michael and Ilatikhameneh, Hesameddin and Ameen, Tarek A. and Rahman, Rajib and Rodwell, Mark J. and Klimeck, Gerhard}, }