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Title: A tunnel FET design for high-current, 120 mV operation
Award ID(s):
1639958
PAR ID:
10038710
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Date Published:
Journal Name:
2016 IEEE International Electron Devices Meeting (IEDM)
Page Range / eLocation ID:
30.2.1 to 30.2.4
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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