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Title: High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping
NSF-PAR ID:
10039105
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
111
Issue:
8
ISSN:
0003-6951
Page Range / eLocation ID:
081109
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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