High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping
- NSF-PAR ID:
- 10039105
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 111
- Issue:
- 8
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 081109
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found