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1. Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B 1–x Al x N, Al 1–x Ga x N, and Ga 1–x In x N)

   https://doi.org/10.1021/acsami.0c11124  

   Wines, Daniel ; Ersan, Fatih ; Ataca, Can ( October 2020 , ACS Applied Materials & Interfaces)

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2. Trap characterization in ultra-wide bandgap Al 0.65 Ga 0.4 N/Al 0.4 Ga 0.6 N MOSHFET's with ZrO 2 gate dielectric using optical response and cathodoluminescence

   https://doi.org/10.1063/1.5125776  

   Jewel, Mohi Uddin ; Alam, Md Didarul ; Mollah, Shahab ; Hussain, Kamal ; Wheeler, Virginia ; Eddy, Charles ; Gaevski, Mikhail ; Simin, Grigory ; Chandrashekhar, MVS ; Khan, Asif ( November 2019 , Applied Physics Letters)
3. Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

   https://doi.org/10.1063/5.0083966  

   Khachariya, Dolar ; Mita, Seiji ; Reddy, Pramod ; Dangi, Saroj ; Dycus, J. Houston ; Bagheri, Pegah ; Breckenridge, M. Hayden ; Sengupta, Rohan ; Rathkanthiwar, Shashwat ; Kirste, Ronny ; et al ( April 2022 , Applied Physics Letters)

   The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3  μm separation possess a record-high breakdown field strength of ∼11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9  μm are 850 and 1500 V, respectively. 

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   https://doi.org/10.1063/1.4983765  

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