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Title: BAlN thin layers for deep UV applications: BAlN thin layers for deep UV applications
Authors:
; ; ; ; ; ; ; ; ; ;
Award ID(s):
1410874
Publication Date:
NSF-PAR ID:
10043791
Journal Name:
physica status solidi (a)
Volume:
212
Issue:
4
Page Range or eLocation-ID:
745 to 750
ISSN:
1862-6300
Sponsoring Org:
National Science Foundation
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  1. AlGaN-based germicidal UV LEDs show promise in fighting the COVID-19 pandemic through disinfection of air, water, and surfaces. We report UV LEDs grown by MOCVD on SiC substrates, fabricated into thin-film flip chip devices. Replacing theuniformp-AlxGa1-xN layer (x = 0.2) with ashort-period-superlatticeof alternating (x = 0.1 and 0.8) Al-composition improved EQE from 1.3% to 2.7% (3.2% with encapsulation) at 20 A/cm2. Peak EQE and WPE values of 4.8% and 2.8% (287 nm) were measured at current densities below 2 A/cm2, and maximum output power of 7.4 mW (76 mW/mm2) was achieved at 284 nm. Further WPE improvements are expected with both superlattice and uniform layer optimization, improved p-contact metallization, and active region optimization.