Girard, Steven N., Chen, Xi, Meng, Fei, Pokhrel, Ankit, Zhou, Jianshi, Shi, Li, and Jin, Song. Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport. Retrieved from https://par.nsf.gov/biblio/10044099. Chemistry of Materials 26.17 Web. doi:10.1021/cm5023823.

Girard, Steven N., Chen, Xi, Meng, Fei, Pokhrel, Ankit, Zhou, Jianshi, Shi, Li, & Jin, Song. Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport. Chemistry of Materials, 26 (17). Retrieved from https://par.nsf.gov/biblio/10044099. https://doi.org/10.1021/cm5023823

Girard, Steven N., Chen, Xi, Meng, Fei, Pokhrel, Ankit, Zhou, Jianshi, Shi, Li, and Jin, Song. "Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport". Chemistry of Materials 26 (17). Country unknown/Code not available. https://doi.org/10.1021/cm5023823. https://par.nsf.gov/biblio/10044099.

@article{osti_10044099,
place = {Country unknown/Code not available}, title = {Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport}, url = {https://par.nsf.gov/biblio/10044099}, DOI = {10.1021/cm5023823}, abstractNote = {}, journal = {Chemistry of Materials}, volume = {26}, number = {17}, author = {Girard, Steven N. and Chen, Xi and Meng, Fei and Pokhrel, Ankit and Zhou, Jianshi and Shi, Li and Jin, Song}, }