Puzyrev, Y. S., Shen, X., Zhang, C. X., Hachtel, J., Ni, K., Choi, B. K., Zhang, E.-X., Ovchinnikov, O., Schrimpf, R. D., Fleetwood, D. M., and Pantelides, S. T. Memristive devices from ZnO nanowire bundles and meshes. Applied Physics Letters 111.15 Web. doi:10.1063/1.5008265.

Puzyrev, Y. S., Shen, X., Zhang, C. X., Hachtel, J., Ni, K., Choi, B. K., Zhang, E.-X., Ovchinnikov, O., Schrimpf, R. D., Fleetwood, D. M., & Pantelides, S. T. Memristive devices from ZnO nanowire bundles and meshes. Applied Physics Letters, 111 (15). https://doi.org/10.1063/1.5008265

Puzyrev, Y. S., Shen, X., Zhang, C. X., Hachtel, J., Ni, K., Choi, B. K., Zhang, E.-X., Ovchinnikov, O., Schrimpf, R. D., Fleetwood, D. M., and Pantelides, S. T. "Memristive devices from ZnO nanowire bundles and meshes". Applied Physics Letters 111 (15). United States: American Institute of Physics. https://doi.org/10.1063/1.5008265. https://par.nsf.gov/biblio/10044194.

@article{osti_10044194,
place = {United States}, title = {Memristive devices from ZnO nanowire bundles and meshes}, url = {https://par.nsf.gov/biblio/10044194}, DOI = {10.1063/1.5008265}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {111}, number = {15}, publisher = {American Institute of Physics}, author = {Puzyrev, Y. S. and Shen, X. and Zhang, C. X. and Hachtel, J. and Ni, K. and Choi, B. K. and Zhang, E.-X. and Ovchinnikov, O. and Schrimpf, R. D. and Fleetwood, D. M. and Pantelides, S. T.}, }