Luengo-Kovac, M., Huang, S., Del Gaudio, D., Occena, J., Goldman, R. S., Raimondi, R., and Sih, V. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities. Physical Review B 96.19 Web. doi:10.1103/PhysRevB.96.195206.
Luengo-Kovac, M., Huang, S., Del Gaudio, D., Occena, J., Goldman, R. S., Raimondi, R., & Sih, V. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities. Physical Review B, 96 (19). https://doi.org/10.1103/PhysRevB.96.195206
Luengo-Kovac, M., Huang, S., Del Gaudio, D., Occena, J., Goldman, R. S., Raimondi, R., and Sih, V.
"Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities". Physical Review B 96 (19). United States: American Physical Society. https://doi.org/10.1103/PhysRevB.96.195206.https://par.nsf.gov/biblio/10046718.
@article{osti_10046718,
place = {United States},
title = {Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities},
url = {https://par.nsf.gov/biblio/10046718},
DOI = {10.1103/PhysRevB.96.195206},
abstractNote = {Not Available},
journal = {Physical Review B},
volume = {96},
number = {19},
publisher = {American Physical Society},
author = {Luengo-Kovac, M. and Huang, S. and Del Gaudio, D. and Occena, J. and Goldman, R. S. and Raimondi, R. and Sih, V.},
}
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