Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation
- Award ID(s):
- 1652871
- NSF-PAR ID:
- 10048032
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 50
- Issue:
- 26
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 265104
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6463/aa74fc
