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Title: Epitaxial Single-Layer MoS 2 on GaN with Enhanced Valley Helicity
Authors:
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Award ID(s):
1753380
Publication Date:
NSF-PAR ID:
10048390
Journal Name:
Advanced Materials
Volume:
30
Issue:
5
Page Range or eLocation-ID:
1703888
ISSN:
0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
National Science Foundation
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