Epitaxial Single-Layer MoS 2 on GaN with Enhanced Valley Helicity
- Award ID(s):
- 1753380
- PAR ID:
- 10048390
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 30
- Issue:
- 5
- ISSN:
- 0935-9648
- Page Range / eLocation ID:
- 1703888
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation