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Title: Epitaxial Single-Layer MoS 2 on GaN with Enhanced Valley Helicity
Award ID(s):
1753380
NSF-PAR ID:
10048390
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Materials
Volume:
30
Issue:
5
ISSN:
0935-9648
Page Range / eLocation ID:
1703888
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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