Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., and Weitering, Hanno H. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice. Physical Review Letters 119.26 Web. doi:10.1103/PhysRevLett.119.266802.
Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., & Weitering, Hanno H. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice. Physical Review Letters, 119 (26). https://doi.org/10.1103/PhysRevLett.119.266802
Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., and Weitering, Hanno H.
"Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice". Physical Review Letters 119 (26). United States: American Physical Society. https://doi.org/10.1103/PhysRevLett.119.266802.https://par.nsf.gov/biblio/10048742.
@article{osti_10048742,
place = {United States},
title = {Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice},
url = {https://par.nsf.gov/biblio/10048742},
DOI = {10.1103/PhysRevLett.119.266802},
abstractNote = {Not Available},
journal = {Physical Review Letters},
volume = {119},
number = {26},
publisher = {American Physical Society},
author = {Ming, Fangfei and Johnston, Steve and Mulugeta, Daniel and Smith, Tyler S. and Vilmercati, Paolo and Lee, Geunseop and Maier, Thomas A. and Snijders, Paul C. and Weitering, Hanno H.},
}
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