Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). Physical Review B 97.3 Web. doi:10.1103/PhysRevB.97.035122.

Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, & Chiang, Tai-Chang. Gapped electronic structure of epitaxial stanene on InSb(111). Physical Review B, 97 (3). https://doi.org/10.1103/PhysRevB.97.035122

Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Peng, Wang, Xiaoxiong, Flötotto, David, Hlevyack, Joseph Andrew, Bian, Guang, Mo, Sung-Kwan, Chou, Mei-Yin, and Chiang, Tai-Chang. "Gapped electronic structure of epitaxial stanene on InSb(111)". Physical Review B 97 (3). United States: American Physical Society. https://doi.org/10.1103/PhysRevB.97.035122. https://par.nsf.gov/biblio/10049424.

@article{osti_10049424,
place = {United States}, title = {Gapped electronic structure of epitaxial stanene on InSb(111)}, url = {https://par.nsf.gov/biblio/10049424}, DOI = {10.1103/PhysRevB.97.035122}, abstractNote = {Not Available}, journal = {Physical Review B}, volume = {97}, number = {3}, publisher = {American Physical Society}, author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Peng and Wang, Xiaoxiong and Flötotto, David and Hlevyack, Joseph Andrew and Bian, Guang and Mo, Sung-Kwan and Chou, Mei-Yin and Chiang, Tai-Chang}, }