LPCVD homoepitaxy of Si doped β-Ga 2 O 3 thin films on (010) and (001) substrates
- Award ID(s):
- 1755479
- PAR ID:
- 10050595
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 112
- Issue:
- 5
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 052104
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation