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Title: LPCVD homoepitaxy of Si doped β-Ga 2 O 3 thin films on (010) and (001) substrates
Award ID(s):
1755479
NSF-PAR ID:
10050595
Author(s) / Creator(s):
 ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
112
Issue:
5
ISSN:
0003-6951
Page Range / eLocation ID:
052104
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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