Ming, Fangfei, Smith, Tyler S., Johnston, Steven, Snijders, Paul C., and Weitering, Hanno H. Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface. Physical Review B 97.7 Web. doi:10.1103/PhysRevB.97.075403.

Ming, Fangfei, Smith, Tyler S., Johnston, Steven, Snijders, Paul C., & Weitering, Hanno H. Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface. Physical Review B, 97 (7). https://doi.org/10.1103/PhysRevB.97.075403

Ming, Fangfei, Smith, Tyler S., Johnston, Steven, Snijders, Paul C., and Weitering, Hanno H. "Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface". Physical Review B 97 (7). United States: American Physical Society. https://doi.org/10.1103/PhysRevB.97.075403. https://par.nsf.gov/biblio/10051068.

@article{osti_10051068,
place = {United States}, title = {Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface}, url = {https://par.nsf.gov/biblio/10051068}, DOI = {10.1103/PhysRevB.97.075403}, abstractNote = {Not Available}, journal = {Physical Review B}, volume = {97}, number = {7}, publisher = {American Physical Society}, author = {Ming, Fangfei and Smith, Tyler S. and Johnston, Steven and Snijders, Paul C. and Weitering, Hanno H.}, }