skip to main content


Title: Band gap and strain engineering of pseudomorphic Ge 1−x −y Si x Sn y alloys on Ge and GaAs for photonic applications
NSF-PAR ID:
10051485
Author(s) / Creator(s):
; ; ; ; ; ; ;  ;  
Publisher / Repository:
American Vacuum Society
Date Published:
Journal Name:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Volume:
36
Issue:
2
ISSN:
2166-2746
Page Range / eLocation ID:
021202
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this