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Title: First-principles predictions of electronic properties of GaAs 1- x - y P y Bi x and GaAs 1- x - y P y Bi x -based heterojunctions
PAR ID:
10051541
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
109
Issue:
11
ISSN:
0003-6951
Page Range / eLocation ID:
112104
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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