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1. Two-Terminal MoS 2 Memristor and the Homogeneous Integration with a MoS 2 Transistor for Neural Networks

   https://doi.org/10.1021/acs.nanolett.2c05007  

   Fu, Shuai ; Park, Ji-Hoon ; Gao, Hongyan ; Zhang, Tianyi ; Ji, Xiang ; Fu, Tianda ; Sun, Lu ; Kong, Jing ; Yao, Jun ( July 2023 , Nano Letters)

   Memristors are promising candidates for constructing neural networks. However, their dissimilar working mechanism to that of the addressing transistors can result in a scaling mismatch, which may hinder efficient integration. Here, we demonstrate two-terminal MoS2 memristors that work with a charge-based mechanism similar to that in transistors, which enables the homogeneous integration with MoS2 transistors to realize one-transistor-one-memristor addressable cells for assembling programmable network. The homogenously integrated cells are implemented in a 2×2 network array to demonstrate the enabled addressability and programmability. The potential for assembling scalable network is evaluated in a simulated neural network using obtained realistic device parameters, which achieves over 91% pattern recognition accuracy. This study also reveals a generic mechanism and strategy that can be applied to other semiconducting devices for the engineering and homogeneous integration of memristive systems. 

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2. Comparison of enhanced second harmonic generation in pyramid-like in-plane MoS 2 flakes to vertically aligned MoS 2 flakes

   https://doi.org/10.1063/5.0035738  

   Agrawal, Abhay V. ; Lemasters, Robert ; Li, Chentao ; Mojibpour, Ali ; Bharadwaj, Palash ; Harutyunyan, Hayk ; Kumar, Mukesh ( February 2021 , Journal of Applied Physics)
3. Origin of Nanoscale Friction Contrast between Supported Graphene, MoS 2 , and a Graphene/MoS 2 Heterostructure

   https://doi.org/10.1021/acs.nanolett.9b02035  

   Vazirisereshk, Mohammad R. ; Ye, Han ; Ye, Zhijiang ; Otero-de-la-Roza, Alberto ; Zhao, Meng-Qiang ; Gao, Zhaoli ; Johnson, A. T. ; Johnson, Erin R. ; Carpick, Robert W. ; Martini, Ashlie ( July 2019 , Nano Letters)
4. Photophysics and Electronic Structure of Lateral Graphene/MoS 2 and Metal/MoS 2 Junctions

   https://doi.org/10.1021/acsnano.0c02527  

   Subramanian, Shruti ; Campbell, Quinn T. ; Moser, Simon K. ; Kiemle, Jonas ; Zimmermann, Philipp ; Seifert, Paul ; Sigger, Florian ; Sharma, Deeksha ; Al-Sadeg, Hala ; Labella, Michael ; et al ( December 2020 , ACS Nano)

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5. Growth of Monolayer MoS 2 on Hydrophobic Substrates as a Novel and Feasible Method to Prevent the Ambient Degradation of Monolayer MoS 2

   https://doi.org/10.1557/adv.2020.292  

   Yao, Kevin ; Banerjee, Dave ; Femi-Oyetoro, John D. ; Hathaway, Evan ; Jiang, Yan ; Squires, Brian ; Jones, Daniel C. ; Neogi, Arup ; Cui, Jingbiao ; Philipose, Usha ; et al ( January 2020 , MRS Advances)

   null (Ed.)

   Abstract Monolayer (ML) molybdenum disulfide (MoS₂) is a novel 2-dimensional (2D) semiconductor whose properties have many applications in devices. Despite its potential, ML MoS₂ is limited in its use due to its degradation under exposure to ambient air. Therefore, studies of possible degradation prevention methods are important. It is well established that air humidity plays a major role in the degradation. In this paper, we investigate the effects of substrate hydrophobicity on the degradation of chemical vapor deposition (CVD) grown ML MoS 2 . We use optical microscopy, atomic force microscopy (AFM), and Raman mapping to investigate the degradation of ML MoS 2 grown on SiO 2 and Si 3 N 4 that are hydrophilic and hydrophobic substrates, respectively. Our results show that the degradation of ML MoS₂ on Si 3 N 4 is significantly less than the degradation on SiO 2 . These results show that using hydrophobic substrates to grow 2D transition metal dichalcogenide ML materials may diminish ambient degradation and enable improved protocols for device manufacturing. 

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