Bajaj, Sanyam, Akyol, Fatih, Krishnamoorthy, Sriram, Zhang, Yuewei, and Rajan, Siddharth. AlGaN channel field effect transistors with graded heterostructure ohmic contacts. Applied Physics Letters 109.13 Web. doi:10.1063/1.4963860.

Bajaj, Sanyam, Akyol, Fatih, Krishnamoorthy, Sriram, Zhang, Yuewei, & Rajan, Siddharth. AlGaN channel field effect transistors with graded heterostructure ohmic contacts. Applied Physics Letters, 109 (13). https://doi.org/10.1063/1.4963860

Bajaj, Sanyam, Akyol, Fatih, Krishnamoorthy, Sriram, Zhang, Yuewei, and Rajan, Siddharth. "AlGaN channel field effect transistors with graded heterostructure ohmic contacts". Applied Physics Letters 109 (13). United States: American Institute of Physics. https://doi.org/10.1063/1.4963860. https://par.nsf.gov/biblio/10051643.

@article{osti_10051643,
place = {United States}, title = {AlGaN channel field effect transistors with graded heterostructure ohmic contacts}, url = {https://par.nsf.gov/biblio/10051643}, DOI = {10.1063/1.4963860}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {109}, number = {13}, publisher = {American Institute of Physics}, author = {Bajaj, Sanyam and Akyol, Fatih and Krishnamoorthy, Sriram and Zhang, Yuewei and Rajan, Siddharth}, }