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1. Magnetic tunnel junctions with MgO-EuO composite tunnel barriers

   https://doi.org/10.1103/PhysRevB.85.144424  

   Miao, Guo-Xing ; Moodera, Jagadeesh S. ( April 2012 , Physical Review B)
2. Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

   https://doi.org/10.1016/j.jmmm.2019.03.005  

   Bapna, Mukund ; Parks, Brad ; Oberdick, Samuel ; Almasi, Hamid ; Sun, Congli ; Voyles, Paul ; Wang, Weigang ; Majetich, Sara A. ( August 2019 , Journal of Magnetism and Magnetic Materials)
3. Computational investigation of half-Heusler/MgO magnetic tunnel junctions with (001) orientation

   https://doi.org/10.1063/5.0051816  

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4. Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions

   https://doi.org/10.1038/s41598-021-93226-4  

   Ogata, Kentaro ; Nakayama, Yusuke ; Xiao, Gang ; Kaiju, Hideo ( July 2021 , Scientific Reports)

   Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bias voltage, which reduces the magnitude of TMR. On the other hand, tunnel magnetocapacitance (TMC), which has also been observed in MTJs, can be increased when subjecting to a biasing voltage, thus exhibiting one of the most interesting spin phenomena. Here we report a large voltage-induced TMC beyond 330% in MgO-based MTJs, which is the largest value ever reported for MTJs. The voltage dependence and frequency characteristics of TMC can be explained by the newly proposed Debye-Fröhlich model using Zhang-sigmoid theory, parabolic barrier approximation, and spin-dependent drift diffusion model. Moreover, we predict that the voltage-induced TMC ratio could reach over 3000% in MTJs. It is a reality now that MTJs can be used as capacitors that are small in size, broadly ranged in frequencies and controllable by a voltage. Our theoretical and experimental findings provide a deeper understanding on the exact mechanism of voltage-induced AC spin transports in spintronic devices. Our research may open new avenues to the development of spintronics applications, such as highly sensitive magnetic sensors, high performance non-volatile memories, multi-functional spin logic devices, voltage controlled electronic components, and energy storage devices.

    

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5. Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

   https://doi.org/10.1063/1.4961670  

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