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Title: Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer
NSF-PAR ID:
10051759
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
108
Issue:
10
ISSN:
0003-6951
Page Range / eLocation ID:
103104
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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