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Title: Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition
Authors:
 ;  ;  ;  ;  ;  ;  ;  
Publication Date:
NSF-PAR ID:
10051828
Journal Name:
Applied Physics Letters
Volume:
107
Issue:
23
Page Range or eLocation-ID:
231905
ISSN:
0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
National Science Foundation
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