Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition
- NSF-PAR ID:
- 10051828
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 107
- Issue:
- 23
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 231905
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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